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| SBP2020 THRU SBP20100 Features * Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction * Guard ring for overvoltage protection * Low power loss, high efficiency * High current capability, Low forward voltage drop * High surge capability * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * Dual rectifier construction * High temperature soldering guaranteed: 250E /10 seconds, 0.25" (6.35mm) from case CURRENT 20.0Amperes VOLTAGE 20 to 100 Volts ITO-220 10 0.5 3.2 0.2 0.1 4.5 0.2 6.4 0.1 2.7 0.2 2.7 0.2 0. 2 3.7 Mechanical Data * Case : JEDEC TO-220 molded plastic body * Terminals : Lead solderable per MIL-STD-750, Method 2026 * Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode * Mounting Position : Any * Weight : 0.08ounce, 2.24 grams 2.54 0.2 0.7 2.54 0.2 0.2 13Min 1.3 0.2 15 0.3 0.5 2.4 PIN 1 PIN 3 Negative CT Suffix "A" 0.2 0.2 PIN 1 PIN 3 Positive CT Suffix "C" + CASE PIN 2 CASE PIN 2 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics (Ratings at 25E ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at Tc=105E Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 10A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25E TA=100E IR Re JC TJ TSTG VRRM VRMS VDC I(AV) SBP 2020 20 14 20 SBP 2030 30 21 30 SBP 2040 40 28 40 SBP 2050 50 35 50 20.0 SBP 2060 60 42 60 SBP 2080 80 56 80 SBP 20100 100 70 100 Units Volts Volts Volts Amps IFSM 150.0 125.0 Amps VF 0.60 1.0 0.75 0.90 Volts mA E /W E E 100.0 3.5 -50 to +125 -65 to +150 Notes: (1) Pulse test: 300iS pulse width, 1% duty cycle (2) Thermal resistance from junction to case RATINGS AND CHARACTERISTIC CURVES SBP2020 THRU SBP20100 FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) 12 SB P2 02 SB 0 -S P2 BP 05 20 0-S 40 SB BP P2 20 08 60 0-S BP 20 10 0 FIG.2-TYPICAL FORWARD CHARACTERISTICS 50 10 INSTANTANEOUS FORWARD CURRENT,(A) 8 2010 -SBP 2080 SBP 2060 -SBP 2020 SBP 6 4 2 0 0 20 40 60 80 10 5.0 0 100 120 140 160 180 200 1.0 Tj=25oC Pulse Width 300us 1% Duty Cycle CASE TEMPERATURE,(oC) 0.1 FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 250 200 150 Tj=25 C o 1.0 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 8.3ms Single Half Sine Wave JEDEC method 100 50 0 SBP 202 0-SB P20 SBP 50 2060 ~SB P20 10 0 1 5 10 50 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz 2800 2400 2000 1600 1200 800 400 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE 10 1.0 Tj=75oC SBP 20 0 SBP2 050~S BP20 60 SBP20 80~SB P2010 0 20-S BP2 04 .1 Tj=25 C o .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) |
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